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Holy Grail for Memory Tech: New Candidate Emerges in Universal Memory Race to Replace RAM and NAND

ultraram

In the dynamic landscape of digital memory, you may already be aware that DRAM and NAND flash memory have historically governed the market with their respective strengths and limitations.

Whilst DRAM is known for its rapid access speeds and robust longevity, its volatility necessitates continuous data refreshing.

Conversely, NAND flash memory is valued for its ability to preserve data even when powered off, though it compromises on speed and endures fewer write cycles.

Enter ULTRARAM, an innovation from Quinas Technology, which appears set to redefine the standards of data storage.

This groundbreaking memory solution promises to amalgamate the rapidity and endurance attributes of DRAM with the non-volatile memory benefits of NAND flash.

What’s more, it offers these features with significantly reduced power consumption, hinting at a potential leap forward in efficiency and sustainability for your memory systems.

Quantum-Mechanical Memory Advancements

ULTRARAM technology employs a particular quantum-mechanical phenomenon known as resonant tunneling. This process grants it unique memory retention capabilities, providing the user with efficient and high-speed writing and deletion operations.

Notably, it achieves this with an exceptionally durable lifespan.

These combined characteristics—durability, energy efficiency, speed—had once been thought of as an impossible feat.

Key Features of Resonant Tunneling in ULTRARAM:

  • Ultimate durability
  • Energy-efficient operations
  • Speedy write/delete functions

Materials used in ULTRARAM are different from traditional silicon, incorporating III-V compound semiconductors like gallium antimonide (GaSb), indium arsenide (InAs), and aluminium antimonide (AlSb).

In contrast with flash memory, ULTRARAM utilizes an innovative structure called a “triple-barrier resonant-tunneling” (TBRT) to maintain charge.

This structure strategically employs thin layers of InAs/AlSb to switch between low and high conductive states effectively.

Attributes of the TBRT Structure:

  • Alternate between resistive and conductive states
  • Retain charge effectively
  • Enhance memory properties

ULTRARAM’s energy efficiency is notable, with switching energy demands dramatically lower than standard DRAM.

It also surpasses other storage technologies such as flash memory by a significant margin.

The non-destructive read feature and inherent non-volatility mean constant refreshing is unnecessary, contributing to its low energy consumption.

Editorial Credit: yurchello_108 / Depositphotos.com